transistors 1 publication date: march 2003 sjc00117bed 2SC2631 silicon npn epitaxial planar type for low-frequency high breakdown voltage amplification complementary to 2sa1123 features ? satisfactory linearity of forward current transfer ratio h fe ? high collector-emitter voltage (base open) v ceo ? small collector output capacitance (common base, input open cir- cuited) c ob absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 150 v collector-emitter voltage (base open) v ceo 150 v emitter-base voltage (collector open) v ebo 5v collector current i c 50 ma peak collector current i cp 100 ma collector power dissipation p c 750 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 100 a, i b = 0 150 v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 05v collector-base cutoff current (emitter open) i cbo v cb = 100 v, i e = 01 a forward current transfer ratio * h fe v ce = 5 v, i c = 10 ma 130 330 ? collector-emitter saturation voltage v ce(sat) i c = 30 ma, i b = 3 ma 1 v transition frequency f t v cb = 10 v, i e = ? 10 ma, f = 200 mhz 160 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 3 pf (common base, input open circuited) noise voltage nv v ce = 10 v, i c = 1 ma, g v = 80 db 150 300 mv r g = 100 k ? , function = flat electrical characteristics t a = 25 c 3 c 5.0 0.2 0.7 0.1 0.45 +0.15 ?0.1 2.5 +0.6 ?0.2 0.45 +0.15 ?0.1 2.5 123 +0.6 ?0.2 4.0 0.2 5.1 0.2 12.9 0.5 2.3 0.2 0.7 0.2 unit: mm 1: emitter 2: collector 3: base eiaj: sc-43a to-92-b1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank r s h fe 130 to 220 185 to 330
2SC2631 2 sjc00117bed h fe ? i c f t ? i e c ob ? v cb p c ? t a i c ? v be v ce(sat) ? i c 0 160 40 120 80 0 1.0 0.8 0.6 0.4 0.2 collector power dissipation p c ( w ) ambient temperature t a ( c ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce = 10 v t a = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.01 0.1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0.1 1 10 100 0 600 500 400 300 200 100 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) ? 1 ? 10 ? 100 0 300 250 200 150 100 50 v cb = 10 v f = 200 mhz t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) 110100 0 5 4 3 2 1 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf)
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